Design, fabrication and characterization of FinFETs - 3D transistors

JOÃO ANTONIO MARTINO

Title
Design, fabrication and characterization of FinFETs (3D transistors)

Abstract
The enormous progress of integrated circuits technology (microelectronics) have been based, since the early 60´s, on the constant scaling of the devices in order to satisfy the performance required as described on the Moore´s Law. As a solution to keep scaling the dimension of transistors to values around 22 nm or less (nanoelectronics), it has been considered the use of a new structure that presents more than one gate (multiple gate). One special multiple gates devices with vertical channel (3D-transistor) called FinFET, which is one of the most promising structures to the next generations of integrated circuits. The goal of this project is the design, fabrication and characterization of triple gate FinFETs transistors in Brazil. The work was divided in two parts. The first part is focus on the modeling, simulation and characterization of state of the art FinFET devices that were fabricated at Interuniversity Microelectronics Center (Imec/Belgium), that has been carried on by University of Sao Paulo and Centro Universitario da FEI. The second part is the fabrication of the triple gate FinFET in Brazil by University of Sao Paulo and State University of Campinas team. Special focus is the study of these devices under harsh environments like radiation-hardened and high/low-temperatures for space application. The markets for integrated circuits (nanoelectronics) built with FinFET are the new generations of mobile phone, mobile internet devices (Smartphone, Tablets, Notebooks), home and mobile multimedia etc.